NDT452AP In Stock|PDF|Datasheet|Price|Agent[NDT452AP Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

Warm reminder: The pictures are for reference only. The actual product may vary

pk Collection Purchase of mobile phones

Model NDT452AP

Description ON Semiconductor Si P沟道 MOSFET NDT452AP, 5 A, Vds=30 V, 3针+焊片 SOT-223封装

Brand: ON Semiconductor

Packaging TO-261-4

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(2476) Minimum order quantity(1)

Add to Cart Buy now

Welcome to use ICGOODFIND AI Assistant

Chip AI consultant

Download related files

Specification parameters
PDF
Silk screen printing
Review and share the purchase （0 ）
Product inquiry (0)
Selection Manual
Adapter model (0)

Technical parameters/number of pins:	4
Technical parameters/drain source resistance:	0.065 Ω
Technical parameters/dissipated power:	3 W
Technical parameters/threshold voltage:	1.6 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/rise time:	20 ns
Technical parameters/Input capacitance (Ciss):	690pF @15V(Vds)
Technical parameters/rated power (Max):	1.1 W
Technical parameters/descent time:	19 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	3 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	4
Encapsulation parameters/Encapsulation:	TO-261-4
Dimensions/Length:	6.5 mm
Dimensions/Width:	3.56 mm
Dimensions/Height:	1.6 mm
Dimensions/Packaging:	TO-261-4
Physical parameters/operating temperature:	-65℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Motor drive and control, power management, computers and computer peripherals
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Lead Free

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
NDT454P	Fairchild	类似代替	TO-261-4	ON Semiconductor Si P沟道 MOSFET NDT454P, 5.9 A, Vds=30 V, 3针+焊片 SOT-223封装	PDF
NDT454P	National Semiconductor	类似代替	SOT-223	ON Semiconductor Si P沟道 MOSFET NDT454P, 5.9 A, Vds=30 V, 3针+焊片 SOT-223封装
NDT456P	Linear Technology	类似代替	SOT-223	增强模式 P 通道 MOSFET， Fairchild Semiconductor 增强模式场效应晶体管使用了 Fairchild 的专利高单元密度的 DMOS 技术进行生产。这种密度非常高的工艺设计用于尽量减小通态电阻，提供耐用可靠的性能和快速切换。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (<250V) 类型。先进的硅技术提供更小的芯片尺寸，其整合到多种工业标准和耐热增强型封装中。 Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。	PDF
NDT456P	Fairchild	类似代替	TO-261-4	增强模式 P 通道 MOSFET， Fairchild Semiconductor 增强模式场效应晶体管使用了 Fairchild 的专利高单元密度的 DMOS 技术进行生产。这种密度非常高的工艺设计用于尽量减小通态电阻，提供耐用可靠的性能和快速切换。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (<250V) 类型。先进的硅技术提供更小的芯片尺寸，其整合到多种工业标准和耐热增强型封装中。 Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。	PDF