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Model MMBFJ108

Description FAIRCHILD SEMICONDUCTOR MMBFJ108. 射频 JFET

Brand: Fairchild

Packaging SOT-23-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	25.0 V
Technical parameters/rated current:	80 mA
Technical parameters/breakdown voltage:	-25.0 V\|25 V
Technical parameters/drain source resistance:	8 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	350 mW
Technical parameters/drain source voltage (Vds):	25.0 V
Technical parameters/breakdown voltage of gate source:	25.0 V
Technical parameters/Continuous drain current (Ids):	80.0 mA
Technical parameters/rated power (Max):	350 mW
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	350 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23-3
Dimensions/Height:	0.94 mm
Dimensions/Packaging:	SOT-23-3
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15
Customs information/ECCN code:	EAR99

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BFR31	ETC1	类似代替		NXP BFR31 晶体管, JFET, JFET, 1 mA, 5 mA, -2.5 V, SOT-23, JFET	PDF
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MMBFJ310LT1G	ON Semiconductor	功能相似	SOT-23-3	ON SEMICONDUCTOR MMBFJ310LT1G 晶体管, JFET, JFET, -25 V, 24 mA, 60 mA, -6.5 V, SOT-23, JFET	PDF