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Model FDP24N40
Description UniFET™ N 通道 MOSFET，Fairchild Semiconductor UniFET™ MOSFET 是 Fairchild Semiconductor 的高电压 MOSFET 系列。 它平面 MOSFET 中具有最小通态电阻，还提供卓越的切换性能和较高雪崩能量强度。 此外，内部栅极-源极 ESD 二极管让 UniFET-II™ MOSFET 可以耐受超过 2000V HBM 浪涌应力。 UniFET™ MOSFET 适用于开关电源转换器应用，如功率因数校正 (PFC)、平板显示屏 (FPD) 电视电源、ATX（先进技术扩展）和电子灯镇流器。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
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Brand: Fairchild
Packaging TO-220-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
8.11  yuan 8.11yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3497) Minimum order quantity(1)
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Technical parameters/polarity:

N-CH

 

Technical parameters/dissipated power:

227 W

 

Technical parameters/drain source voltage (Vds):

400 V

 

Technical parameters/Continuous drain current (Ids):

24A

 

Technical parameters/Input capacitance (Ciss):

3020pF @25V(Vds)

 

Technical parameters/rated power (Max):

227 W

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

227W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Length:

10.1 mm

 

Dimensions/Width:

4.7 mm

 

Dimensions/Height:

15.38 mm

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Rail, Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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