Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 2.1 Ω |
|
Technical parameters/dissipated power: | 0.402 W |
|
Technical parameters/threshold voltage: | 1 V |
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Technical parameters/Input capacitance: | 20.2 pF |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/rise time: | 8.4 ns |
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Technical parameters/Input capacitance (Ciss): | 20.2pF @30V(Vds) |
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Technical parameters/descent time: | 5.1 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 310mW (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSN20,215
|
Philips | 功能相似 |
N 通道 MOSFET，高达 0.9A，NXP Semiconductors ### MOSFET 晶体管，NXP Semiconductors
|
|||
BSN20,215
|
NXP | 功能相似 | SOT-23-3 |
N 通道 MOSFET，高达 0.9A，NXP Semiconductors ### MOSFET 晶体管，NXP Semiconductors
|
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