Technical parameters/drain source voltage (Vds): | 60 V |
|
Technical parameters/Input capacitance (Ciss): | 38pF @10V(Vds) |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 310 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-323 |
|
Dimensions/Length: | 2.2 mm |
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Dimensions/Width: | 1.35 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-323 |
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Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | PB free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Panjit | 功能相似 | SOT-323 |
FAIRCHILD SEMICONDUCTOR 2N7002KW 晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
|
||
|
|
CJ | 功能相似 | SOT-323 |
FAIRCHILD SEMICONDUCTOR 2N7002KW 晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
|
||
2N7002KW
|
UTC | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR 2N7002KW 晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
|
||
2N7002KW
|
LiteOn | 功能相似 | SOT-323 |
FAIRCHILD SEMICONDUCTOR 2N7002KW 晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
|
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