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Encapsulation parameters/Encapsulation: | TO-252 |
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Dimensions/Packaging: | TO-252 |
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Other/Packaging/Shell: | TO-252 |
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Other/Td (on) (ns): | 10 |
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Other/Cos (pF): | 485 |
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Other/FET types: | N-Channel |
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Other/Gate Voltage Vgs: | 20V |
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Other/Rds On (Max) @ Id, Vgs: | 8.2mΩ@10V |
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Other/Crss (pF): | 13 |
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Other/drain source voltage Vds: | 100V |
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Other/Rds On (Max) @ 4.5V: | 10.7mΩ |
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Other/ESD Dior: | No |
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Other/Ciss (pF): | 2500 |
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Other/Terr (ns): | 34 |
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Other/Qrr (nC): | 170 |
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Other/Td (off) (ns): | 31 |
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Other/VGS (th): | 2.5 |
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Other/QG * (nC): | 16.7 |
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Other/Pd - power dissipation (Max): | 89W |
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Other/continuous drain current Id: | 70A |
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Other Schottky Dior: | No |
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Other/Qgd (nC): | 5 |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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