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Model QS6M3TR
Description ROHM QS6M3TR 双路场效应管, MOSFET, N和P沟道, 1.5 A, 20 V, 0.17 ohm, 4.5 V, 1.5 V
Product QR code
Brand: ROHM Semiconductor
Packaging TSOT-23-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.48  yuan 0.48yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4184) Minimum order quantity(1)
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Technical parameters/rated current:

1.50 A

 

Technical parameters/number of pins:

6

 

Technical parameters/drain source resistance:

0.17 Ω

 

Technical parameters/polarity:

N-Channel, P-Channel

 

Technical parameters/dissipated power:

900 mW

 

Technical parameters/threshold voltage:

1.5 V

 

Technical parameters/drain source voltage (Vds):

30V, 20V

 

Technical parameters/Continuous drain current (Ids):

1.50 A

 

Technical parameters/rise time:

12.0 ns

 

Technical parameters/Input capacitance (Ciss):

80pF @10V(Vds)

 

Technical parameters/rated power (Max):

1.25 W

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

1.25 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

TSOT-23-6

 

Dimensions/Length:

2.9 mm

 

Dimensions/Width:

1.6 mm

 

Dimensions/Height:

0.85 mm

 

Dimensions/Packaging:

TSOT-23-6

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Portable equipment, motor drive and control, motor drive& Control, Industrial, Power Management, Portable Devices, Industrial, Power Management

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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