Technical parameters/power supply voltage (DC): | 3.30 V, 3.60 V (max) |
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Technical parameters/power supply current: | 16 mA |
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Technical parameters/number of pins: | 32 |
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Technical parameters/clock frequency: | 45.0 GHz |
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Technical parameters/digits: | 8 |
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Technical parameters/access time: | 45 ns |
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Technical parameters/memory capacity: | 1000000 B |
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Technical parameters/access time (Max): | 45 ns |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/power supply voltage: | 2.2V ~ 3.6V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 32 |
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Encapsulation parameters/Encapsulation: | TSOP-32 |
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Dimensions/Packaging: | TSOP-32 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ (TA) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CY62128EV30LL-45ZXA
|
Cypress Semiconductor | 完全替代 | TSOP-32 |
CY62128EV30 系列 1 Mb (128 K x 8) 2.2 - 3.6 V 45 ns 静态RAM - TSOP-32
|
||
CY62128EV30LL-45ZXI
|
Cypress Semiconductor | 类似代替 | TSOP-32 |
CYPRESS SEMICONDUCTOR CY62128EV30LL-45ZXI 存储芯片, SRAM, 1M, 并行口, 45NS, TSOP-32
|
||
IS62WV1288BLL-55TLI
|
Integrated Silicon Solution | 功能相似 | TSOP-32 |
RAM,ISSI **ISSI** 静态 RAM 产品使用高性能 CMOS 技术。 提供各种静态 RAM,其中包括 5V 高速异步 SRAM、高速低功率异步 SRAM、5V 低功率类型异步 SRAM、超低功率 CMOS 静态 RAM 和 PowerSaverTM 低功率异步 SRAM。 ISSI SRAM 设备提供各种电压、存储器大小和不同的组织。 它们适用于以下应用,如 CPU 缓存、嵌入式处理器、硬盘和工业电子开关。 电源:1.8V/3.3V/5V 提供的封装:BGA、SOJ、SOP、sTSOP、TSOP 提供的配置选择:x8 和 x16 ECC 功能可用于高速异步 SRAM ### SRAM(静态随机存取存储器)
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