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Model S34ML01G200TFI000

Description S34ML01G2 系列 1 Gb (128M x 8) 3 V 表面贴装嵌入式 NAND 闪存 - TSOP-48

Brand: Cypress Semiconductor

Packaging TSOP-48

Delivery time

Packaging method Tray

Standard packaging quantity 1

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Technical parameters/power supply voltage (DC):	2.70V (min)
Technical parameters/power supply current:	30 mA
Technical parameters/number of pins:	48
Technical parameters/digits:	8
Technical parameters/access time:	25 ns
Technical parameters/memory capacity:	128000000 B
Technical parameters/operating temperature (Max):	85 ℃
Technical parameters/operating temperature (Min):	-40 ℃
Technical parameters/power supply voltage:	3.3 V
Technical parameters/power supply voltage (Max):	3.6 V
Technical parameters/power supply voltage (Min):	2.7 V
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	48
Encapsulation parameters/Encapsulation:	TSOP-48
Dimensions/Length:	18.5 mm
Dimensions/Width:	12.1 mm
Dimensions/Height:	1.05 mm
Dimensions/Packaging:	TSOP-48
Physical parameters/operating temperature:	-40℃ ~ 85℃ (TA)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tray
Other/Manufacturing Applications:	Computers & Computer Peripherals, Computers and computer peripherals
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2015/12/17
Customs information/ECCN code:	3A991.b.1.a

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
S34ML01G200BHI000	Spansion	类似代替	BGA-63	S34ML01G2 系列 1 Gb (128M x 8) 3 V 表面贴装嵌入式 NAND 闪存 - BGA-63	PDF
S34ML01G200TFI000	Cypress Semiconductor	完全替代	TSOP-48	S34ML01G2 系列 1 Gb (128M x 8) 3 V 表面贴装嵌入式 NAND 闪存 - TSOP-48	PDF
S34ML01G200TFI000	Spansion	完全替代	TSOP-48	S34ML01G2 系列 1 Gb (128M x 8) 3 V 表面贴装嵌入式 NAND 闪存 - TSOP-48	PDF
S34ML01G200TFI003	Spansion	完全替代	TSOP-48	SLC NAND Flash Parallel 3V 1G-bit 128M x 8Bit 48Pin TSOP-I T/R	PDF