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Model SUM110P08-11L-E3
Description VISHAY SUM110P08-11L-E3 晶体管, MOSFET, P沟道, -110 A, -80 V, 0.0093 ohm, -10 V, -3 V
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Brand: Vishay Semiconductor
Packaging TO-263
Delivery time
Packaging method
Standard packaging quantity 1
14.63  yuan 14.63yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7184) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.0093 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

375 W

 

Technical parameters/drain source voltage (Vds):

80 V

 

Technical parameters/Continuous drain current (Ids):

-11.0 A

 

Technical parameters/Input capacitance (Ciss):

10850pF @40V(Vds)

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-50 ℃

 

Technical parameters/dissipated power (Max):

13600 mW

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-263

 

Dimensions/Height:

4.83 mm

 

Dimensions/Packaging:

TO-263

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/06/15

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SUM110P08-11-E3 SUM110P08-11-E3 Vishay Siliconix 类似代替 TO-263-3
MOSFET P-CH 80V 110A D2PAK
PDF
SUM110P08-11-E3 SUM110P08-11-E3 Vishay Semiconductor 类似代替
MOSFET P-CH 80V 110A D2PAK
PDF

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