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Model SISA12ADN-T1-GE3
Description Power Field-Effect Transistor, 25A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Product QR code
Brand: Vishay Intertechnology
Packaging 1212
Delivery time
Packaging method
Standard packaging quantity 1
5.41  yuan 5.41yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2284) Minimum order quantity(1)
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Technical parameters/drain source resistance:

0.0032 Ω

 

Technical parameters/dissipated power:

28 W

 

Technical parameters/threshold voltage:

1.1 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

1212

 

Dimensions/Packaging:

1212

 

Other/Product Lifecycle:

Active

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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