Technical parameters/dissipated power: | 750mW (Ta) |
|
Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/rated power (Max): | 750 mW |
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Technical parameters/dissipated power (Max): | 750mW (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI2312BDS-T1-E3
|
Vishay Semiconductor | 类似代替 | SOT-23 |
TRANSISTOR 3900mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal
|
||
SI2312BDS-T1-E3
|
Vishay Intertechnology | 类似代替 | SOT-23-3 |
TRANSISTOR 3900mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal
|
||
SI2312BDS-T1-E3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
TRANSISTOR 3900mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal
|
||
SI2312BDS-T1-E3
|
VISHAY | 类似代替 | SOT-23-3 |
TRANSISTOR 3900mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal
|
||
SI2312DS-T1
|
Vishay Semiconductor | 功能相似 | SOT-23 |
N-Channel 20V (D-S) MOSFET
|
||
SI2312DS-T1
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
N-Channel 20V (D-S) MOSFET
|
||
SI2312DS-T1-E3
|
Vishay Semiconductor | 功能相似 | SOT-23 |
MOSFET 20V 3.77A
|
||
SI2312DS-T1-E3
|
VISHAY | 功能相似 | SOT-23 |
MOSFET 20V 3.77A
|
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