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Model SI7938DP-T1-GE3
Description MOSFET 2N-CH 40V 60A 8SOIC
Product QR code
Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method
Standard packaging quantity 1
5.15  yuan 5.15yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3129) Minimum order quantity(1)
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Technical parameters/drain source resistance:

0.0048 Ω

 

Technical parameters/dissipated power:

3.5 W

 

Technical parameters/threshold voltage:

2.5 V

 

Technical parameters/drain source voltage (Vds):

40 V

 

Technical parameters/Input capacitance (Ciss):

2300pF @20V(Vds)

 

Technical parameters/rated power (Max):

46 W

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SO-8

 

Dimensions/Packaging:

SO-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with standard/REACH SVHC version:

2014/06/16

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SQ4920EY-T1_GE3 SQ4920EY-T1_GE3 VISHAY 功能相似 SOIC-8
MOSFET 2N-CH 30V 8A 8SO
PDF
SQ4920EY-T1_GE3 SQ4920EY-T1_GE3 Vishay Siliconix 功能相似 SOIC-8
MOSFET 2N-CH 30V 8A 8SO
PDF

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