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Specification parameters
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Technical parameters/number of output interfaces:

Technical parameters/Input voltage (DC):

5.50 V

Technical parameters/output current:

500 mA

Technical parameters/number of channels:

Technical parameters/number of pins:

Technical parameters/dissipated power:

700 mW

Technical parameters/Static current:

1.00 µA

Technical parameters/rise time:

100 µs

Technical parameters/Input voltage (Max):

5.5 V

Technical parameters/input voltage (Min):

2.7 V

Technical parameters/output current (Max):

500 mA

Technical parameters/descent time:

5 µs

Technical parameters/operating temperature (Max):

125 ℃

Technical parameters/operating temperature (Min):

-40 ℃

Technical parameters/dissipated power (Max):

700 mW

Technical parameters/power supply voltage (Max):

5.5 V

Technical parameters/power supply voltage (Min):

2.7 V

Technical parameters/input voltage:

2.7V ~ 5.5V

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

SOIC-8

Dimensions/Packaging:

SOIC-8

Physical parameters/operating temperature:

-40℃ ~ 125℃ (TJ)

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tape & Reel (TR)

Compliant with standards/RoHS standards:

RoHS Compliant

Compliant with standards/lead standards:

Lead Free

Compliant with standard/REACH SVHC version:

2015/06/15

Customs information/ECCN code:

EAR99

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
LM3526M-H	National Semiconductor	完全替代	SOIC-8	LM3526M-H 管装	PDF
LM3526M-L	National Semiconductor	完全替代	SOP-8	双端口 USB 电源开关和过流保护 8-SOIC -40 to 125	PDF
LM3526MX-H/NOPB	TI	完全替代	SOIC-8	USB 电源开关和过流保护
LM3526MX-H/NOPB	National Semiconductor	完全替代	SOIC-8	USB 电源开关和过流保护	PDF

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643