Technical parameters/dissipated power: | 500 mW |
|
Technical parameters/Input capacitance: | 30 pF |
|
Technical parameters/breakdown voltage (collector emitter): | 60 V |
|
Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 10V |
|
Technical parameters/rated power (Max): | 500 mW |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 500 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | SMD-4 |
|
Dimensions/Packaging: | SMD-4 |
|
Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -65℃ ~ 200℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Pack |
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Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANS2N2907AUB
|
Microsemi | 类似代替 | Surface Mount |
PNP小信号硅晶体管 PNP SMALL SIGNAL SILICON TRANSISTOR
|
||
|
|
ST Microelectronics | 类似代替 |
Trans GP BJT PNP 60V 0.6A 3Pin CSOT-23
|
|||
JANTXV2N2907AUB
|
Microsemi | 类似代替 | SMD-4 |
Trans GP BJT PNP 60V 0.6A 3Pin CSOT-23
|
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