Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.035 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 1.25 W |
|
Technical parameters/threshold voltage: | 1.2 V |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Continuous drain current (Ids): | 4.2A |
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Technical parameters/rise time: | 10 ns |
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Technical parameters/Input capacitance (Ciss): | 740pF @15V(Vds) |
|
Technical parameters/rated power (Max): | 1.25 W |
|
Technical parameters/descent time: | 26 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 1.25W (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Length: | 3.04 mm |
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Dimensions/Width: | 2.64 mm |
|
Dimensions/Height: | 1.02 mm |
|
Dimensions/Packaging: | SOT-23-3 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLML2502GPBF
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Infineon | 功能相似 | SOT-23 |
SOT-23 N-CH 20V 4.2A
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IRLML2502TRPBF
|
Infineon | 完全替代 | SOT-23-3 |
INFINEON IRLML2502TRPBF 场效应管, MOSFET, N沟道, 20V, 4.2A, SOT-23-3, 整卷
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IRLML2502TRPBF
|
International Resistive | 完全替代 |
INFINEON IRLML2502TRPBF 场效应管, MOSFET, N沟道, 20V, 4.2A, SOT-23-3, 整卷
|
|||
IRLML2502TRPBF
|
International Rectifier | 完全替代 | SOT-23-3 |
INFINEON IRLML2502TRPBF 场效应管, MOSFET, N沟道, 20V, 4.2A, SOT-23-3, 整卷
|
||
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|
Infineon | 功能相似 |
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
|
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L250
|
Chemi-Con | 功能相似 |
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
|
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L250
|
TE Connectivity | 功能相似 |
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
|
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ZXMN2F30FHTA
|
Diodes Zetex | 功能相似 | SOT-23-3 |
ZXMN2F30FHTA 编带
|
||
|
|
Zetex | 功能相似 | SOT-23-3 |
ZXMN2F30FHTA 编带
|
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