Technical parameters/capacitance: | 300 pF |
|
Technical parameters/output current: | ≤35.0 A |
|
Technical parameters/number of pins: | 4 |
|
Technical parameters/forward voltage: | 1.1 V |
|
Technical parameters/thermal resistance: | 1.4℃/W (RθJC) |
|
Technical parameters/forward current: | 35 A |
|
Technical parameters/Maximum forward surge current (Ifsm): | 400 A |
|
Technical parameters/forward voltage (Max): | 1.1 V |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/working junction temperature (Max): | 150 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | GBPC-W |
|
Dimensions/Length: | 28.8 mm |
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Dimensions/Width: | 28.8 mm |
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Dimensions/Height: | 7.87 mm |
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Dimensions/Packaging: | GBPC-W |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Each |
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Other/Manufacturing Applications: | Communications & Networking, Industrial, Power Management, Consumer Electronics |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
GBPC3510-E4/51
|
Vishay Semiconductor | 完全替代 | MODULE |
VISHAY GBPC3510-E4/51. 桥式整流器, 单相, 35A, 1KV, 快接端子
|
||
GBPC3510-E4/51
|
Vishay Semiconductor | 完全替代 | MODULE |
VISHAY GBPC3510-E4/51. 桥式整流器, 单相, 35A, 1KV, 快接端子
|
||
GBPC3510-E4/51
|
General Semiconductor | 完全替代 |
VISHAY GBPC3510-E4/51. 桥式整流器, 单相, 35A, 1KV, 快接端子
|
|||
GBPC3510W
|
Vishay Dale | 类似代替 | PCB |
Bridge Rectifier Diode, 1 Phase, 35A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBPC-W, 4Pin
|
||
GBPC3510W
|
GeneSiC Semiconductor | 类似代替 | GBPC-TW-4 |
Bridge Rectifier Diode, 1 Phase, 35A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBPC-W, 4Pin
|
||
GBPC3510W
|
International Rectifier | 类似代替 |
Bridge Rectifier Diode, 1 Phase, 35A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBPC-W, 4Pin
|
|||
GBPC3510W
|
HY Electronic | 类似代替 | GBPC-W |
Bridge Rectifier Diode, 1 Phase, 35A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBPC-W, 4Pin
|
||
GBPC3510W
|
ON Semiconductor | 类似代替 | GBPC-W |
Bridge Rectifier Diode, 1 Phase, 35A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBPC-W, 4Pin
|
||
GBPC3510W
|
LiteOn | 类似代替 |
Bridge Rectifier Diode, 1 Phase, 35A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBPC-W, 4Pin
|
|||
GBPC3510W
|
Taiwan Semiconductor | 类似代替 | GBPC-W |
Bridge Rectifier Diode, 1 Phase, 35A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBPC-W, 4Pin
|
||
GBPC3510W
|
Fairchild | 类似代替 | GBPC-TW-4 |
Bridge Rectifier Diode, 1 Phase, 35A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBPC-W, 4Pin
|
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