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Model VB40100C-E3/4W

Description 双高压Trench MOS势垒肖特基整流器超低VF = 0.38 V在IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A

Brand: VISHAY

Packaging TO-263

Delivery time

Packaging method Tube

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(9987) Minimum order quantity(1)

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Technical parameters/rated voltage (DC):	100 V
Technical parameters/rated current:	40.0 A
Technical parameters/number of pins:	3
Technical parameters/forward voltage:	0.73V @20A
Technical parameters/Maximum reverse voltage (Vrrm):	100 V
Technical parameters/forward current:	40 A
Technical parameters/Maximum forward surge current (Ifsm):	250 A
Technical parameters/forward voltage (Max):	730mV @20A
Technical parameters/forward current (Max):	40 A
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-40 ℃
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-263
Dimensions/Packaging:	TO-263
Physical parameters/operating temperature:	-40℃ ~ 150℃
Other/Packaging Methods:	Tube
Other/Manufacturing Applications:	Business, Power Management, Industrial
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Lead Free

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	VB40100C-E3/8W	Vishay Siliconix	类似代替	Through Hole	TMBS - Trench MOS 势垒肖特基整流器，30A 至 80A，Vishay Semiconductor Vishay 的 Trench MOS 势垒肖特基 (TMBS) 整流器系列包含专利 Trench 结构。与平面肖特基整流器相比，TMBS 整流器可提供多个优势。工作电压为 45V 及更高时平面肖特基整流器就失去了其快速转换速度的优势，且低正向压降到极度程度。专利型 TMBS 结构通过少量缩减向漂移区域的载体注入来解决这些问题，从而最大程度减少积累电荷并提高转换速度。专利 Trench 结构提高交流/直流开关模式电源和直流/直流转换器的效率高功率密度和低正向电压 ### 特点 ### 肖特基整流器，Vishay Semiconductor	PDF
	VB40100C-E3/8W	VISHAY	类似代替	TO-263	TMBS - Trench MOS 势垒肖特基整流器，30A 至 80A，Vishay Semiconductor Vishay 的 Trench MOS 势垒肖特基 (TMBS) 整流器系列包含专利 Trench 结构。与平面肖特基整流器相比，TMBS 整流器可提供多个优势。工作电压为 45V 及更高时平面肖特基整流器就失去了其快速转换速度的优势，且低正向压降到极度程度。专利型 TMBS 结构通过少量缩减向漂移区域的载体注入来解决这些问题，从而最大程度减少积累电荷并提高转换速度。专利 Trench 结构提高交流/直流开关模式电源和直流/直流转换器的效率高功率密度和低正向电压 ### 特点 ### 肖特基整流器，Vishay Semiconductor	PDF