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Model SUD50P04-15-E3

Description 晶体管, MOSFET, 沟槽式FET, P沟道, -50 A, -40 V, 0.012 ohm, -10 V, -1 V

Brand: VISHAY

Packaging TO-252-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.024 Ω
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	3 W
Technical parameters/drain source voltage (Vds):	40 V
Technical parameters/breakdown voltage of gate source:	±20.0 V
Technical parameters/Continuous drain current (Ids):	-50.0 A
Technical parameters/rise time:	380 ns
Technical parameters/Input capacitance (Ciss):	5400pF @25V(Vds)
Technical parameters/rated power (Max):	3 W
Technical parameters/descent time:	140 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	3000 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Packaging:	TO-252-3
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Packaging Methods:	Tape & Reel (TR)
Other/Minimum Packaging:	2000
Other/Manufacturing Applications:	Power Management, Industrial
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC

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