Technical parameters/dissipated power: | 130000 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 600 V |
|
Technical parameters/reverse recovery time: | 31 ns |
|
Technical parameters/rated power (Max): | 130 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 130000 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Packaging: | TO-263-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRG4BC30KD-SPBF
|
Infineon | 功能相似 | TO-263-3 |
Trans IGBT Chip N-CH 600V 28A 100000mW 3Pin(2+Tab) D2PAK Tube
|
||
IRG4BC40W-SPBF
|
International Rectifier | 功能相似 | TO-263-3 |
Trans IGBT Chip N-CH 600V 40A 160000mW 3Pin(2+Tab) D2PAK Tube
|
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