Encapsulation parameters/Encapsulation: | SO-8 |
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Dimensions/Packaging: | SO-8 |
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Other/궟동: | Single |
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Other/Case/Package: | PowerPAK SO-8 |
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Other/Packaging: | Reel |
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Other/Brand: | Vishay Semiconductors |
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Other/동착동동: | SMD/SMT |
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Other/Soft 랜イ동터극동: | N-Channel |
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Other/Channel Mode: | Enhancement |
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Other/하강 Economy: | 11 ns |
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Other/Id - Link Files: | 7.6 A |
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Other/Delete 동업체: | Vishay |
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Other/동대작동온도: | 150 C |
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Other/π소작동온도: | 55 C |
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Other/Pd - 력발산: | 1.9 W |
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Other/Delete: | N-Channel MOSFETs |
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Other/RDs On - Drain Source 저항: | 16.5 mOhms |
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Other/상승ク」: | 11 ns |
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Other/Standard Pack Qty: | 3000 |
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Other/표준오프イContact Us ": | 40 ns |
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Other/Vds - 레イ?동항복압: | 80 V |
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Other/Vgs - 게イプ - ?동항복압: | 20 V |
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Other/RoHS: | Non-Compliant |
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Compliant with standards/RoHS standards: | Non-Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7852DP-T1
|
Vishay Semiconductor | 功能相似 | SO |
Power Field-Effect Transistor, 7.6A I(D), 80V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SOP-8
|
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