Technical parameters/drain source resistance: | 0.073 Ω |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 1.9 W |
|
Technical parameters/drain source voltage (Vds): | -150 V |
|
Technical parameters/Continuous drain current (Ids): | -5.20 A |
|
Technical parameters/rise time: | 46 ns |
|
Technical parameters/descent time: | 64 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 1.9W (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SO-8 |
|
Dimensions/Length: | 6.15 mm |
|
Dimensions/Width: | 5.15 mm |
|
Dimensions/Height: | 1.04 mm |
|
Dimensions/Packaging: | SO-8 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2014/06/16 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7439DP-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET P-CH 150V 3A 8-SOIC
|
||
SI7439DP-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET P-CH 150V 3A 8-SOIC
|
||
SI7439DP-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 150V 3A 8-SOIC
|
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