SI1302DL-T1-E3 In Stock|PDF|Datasheet|Price|Agent[SI1302DL-T1-E3 Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

Warm reminder: The pictures are for reference only. The actual product may vary

pk Collection Purchase of mobile phones

Model SI1302DL-T1-E3

Description N 通道 MOSFET，30V 至 50V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor

Brand: VISHAY

Packaging SOT-323

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

Add to Cart Buy now

Welcome to use ICGOODFIND AI Assistant

Chip AI consultant

Download related files

PDF

Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.41 Ω
Technical parameters/polarity:	N-CH
Technical parameters/dissipated power:	0.31 W
Technical parameters/threshold voltage:	1 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Continuous drain current (Ids):	600mA
Technical parameters/rise time:	8 ns
Technical parameters/rated power (Max):	280 mW
Technical parameters/descent time:	7 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	280 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-323
Dimensions/Length:	2.2 mm
Dimensions/Width:	1.35 mm
Dimensions/Height:	1 mm
Dimensions/Packaging:	SOT-323
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Minimum Packaging:	3000
Other/Manufacturing Applications:	Industrial, power management
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free