Technical parameters/forward voltage: | 0.5 V |
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Technical parameters/thermal resistance: | 75℃/W (RθJA) |
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Technical parameters/Maximum reverse voltage (Vrrm): | 40 V |
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Technical parameters/forward current: | 1000 mA |
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Technical parameters/Maximum forward surge current (Ifsm): | 30 A |
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Technical parameters/forward voltage (Max): | 500mV @1A |
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Technical parameters/forward current (Max): | 1 A |
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Technical parameters/operating temperature (Max): | 125 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-213AB |
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Dimensions/Length: | 5.2 mm |
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Dimensions/Width: | 2.67 mm |
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Dimensions/Height: | 2.67 mm |
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Dimensions/Packaging: | DO-213AB |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Minimum Packaging: | 1500 |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BYM13-40-E3/96
|
Vishay Semiconductor | 类似代替 | DO-213AB |
VISHAY BYM13-40-E3/96 肖特基整流器, 单, 40 V, 1 A, DO-213AB, 2 引脚, 500 mV
|
||
BYM13-40-E3/97
|
Vishay Semiconductor | 类似代替 | DO-213AB |
1A 至 1.5A，Vishay Semiconductor 来自 Vishay Semiconductor 的一系列肖特基整流器。 这些二极管具有极低的正向电压降和非常快的切换作用。 肖特基二极管的反向恢复时间非常短且适用于需要快速切换和低功耗的应用。 ### 肖特基整流器，Vishay Semiconductor
|
||
BYM13-40-E3/97
|
VISHAY | 类似代替 | DO-213AB |
1A 至 1.5A，Vishay Semiconductor 来自 Vishay Semiconductor 的一系列肖特基整流器。 这些二极管具有极低的正向电压降和非常快的切换作用。 肖特基二极管的反向恢复时间非常短且适用于需要快速切换和低功耗的应用。 ### 肖特基整流器，Vishay Semiconductor
|
||
SGL41-40HE3/96
|
Vishay Semiconductor | 类似代替 | DO-213AB |
表面贴装肖特基整流器 Surface Mount Schottky Barrier Rectifier
|
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