Technical parameters/number of channels: | 1 |
|
Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 238W (Tc) |
|
Technical parameters/threshold voltage: | 1.75 V |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Continuous drain current (Ids): | 300A |
|
Technical parameters/Input capacitance (Ciss): | 8598pF @15V(Vds) |
|
Technical parameters/rated power (Max): | 238 W |
|
Technical parameters/dissipated power (Max): | 238W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | LFPAK-4 |
|
Dimensions/Packaging: | LFPAK-4 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN1R2-30YLC,115
|
Nexperia | 类似代替 | SOT-669 |
Nexperia Si N沟道 MOSFET PSMN1R2-30YLC,115, 100 A, Vds=30 V, 4引脚 SOT-669封装
|
||
PSMN2R0-30YLE,115
|
NXP | 类似代替 | SOT-669-4 |
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0017 ohm, 10 V, 1.7 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review