Technical parameters/number of pins: | 5 |
|
Technical parameters/drain source resistance: | 0.0102 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 107 W |
|
Technical parameters/threshold voltage: | 2.3 V |
|
Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Continuous drain current (Ids): | 11.2A |
|
Technical parameters/rise time: | 25 ns |
|
Technical parameters/Input capacitance (Ciss): | 1460pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 3 W |
|
Technical parameters/descent time: | 10 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 3.7W (Ta), 107W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 5 |
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Encapsulation parameters/Encapsulation: | DFN-8 |
|
Dimensions/Packaging: | DFN-8 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NVTFS5820NLTAG
|
ON Semiconductor | 功能相似 | WDFN-8 |
ON SEMICONDUCTOR NVTFS5820NLTAG MOSFET Transistor, N Channel, 11 A, 60 V, 0.0101 ohm, 10 V, 2.3 V 新
|
||
NVTFS5820NLTWG
|
ON Semiconductor | 功能相似 | WDFN-8 |
N 通道功率 MOSFET，60V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
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||
NVTFS5820NLWFTWG
|
ON Semiconductor | 功能相似 | WDFN-8 |
60V,29A,11.5mΩ,单N沟道功率MOSFET
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