Technical parameters/forward voltage: | 540mV @1A |
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Technical parameters/forward current: | 1000 mA |
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Technical parameters/forward current (Max): | 1000 mA |
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Technical parameters/operating temperature (Max): | 125 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 200 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | SOD-323 |
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Dimensions/Height: | 0.9 mm |
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Dimensions/Packaging: | SOD-323 |
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Physical parameters/operating temperature: | -55℃ ~ 125℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Ideally suited for application as a blocking diode in charging applications or as part of discrete buck converter or discrete boost converter. |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BAS3010B03WE6327HTSA1
|
Infineon | 功能相似 | SOD-323-2 |
INFINEON BAS3010B03WE6327HTSA1 小信号肖特基二极管, AEC-Q101, 单, 30 V, 1 A, 550 mV, 10 A, 125 °C
|
||
NSR1020MW2T3G
|
ON Semiconductor | 类似代替 | SOD-323 |
ON SEMICONDUCTOR NSR1020MW2T3G Small Signal Schottky Diode, AEC-Q101, Single, 20 V, 1 A, 540 mV, 125 °C 新
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