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Technical parameters/frequency: | 100 MHz |
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Technical parameters/halogen-free state: | Halogen Free |
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Technical parameters/number of pins: | 4 |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 2 W |
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Technical parameters/breakdown voltage (collector emitter): | 60 V |
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Technical parameters/Maximum allowable collector current: | 6A |
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Technical parameters/minimum current amplification factor (hFE): | 120 @1A, 2V |
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Technical parameters/rated power (Max): | 800 mW |
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Technical parameters/DC current gain (hFE): | 120 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SOT-223-4 |
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Dimensions/Length: | 6.7 mm |
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Dimensions/Width: | 3.7 mm |
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Dimensions/Height: | 1.65 mm |
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Dimensions/Packaging: | SOT-223-4 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSV60601MZ4T3G
|
ON Semiconductor | 完全替代 | TO-261-4 |
60 V ， 6.0 A，低VCE （ sat）的NPN晶体管 60 V, 6.0 A, Low VCE(sat) NPN Transistor
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