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Model NSS1C200MZ4T1G
Description 100 V， 2.0 A ，低VCE （ sat）的PNP晶体管 100 V, 2.0 A, Low VCE(sat) PNP Transistor
Product QR code
Brand: ON Semiconductor
Packaging TO-261-4
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.73  yuan 1.73yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9911) Minimum order quantity(1)
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Technical parameters/frequency:

120 MHz

 

Technical parameters/halogen-free state:

Halogen Free

 

Technical parameters/number of pins:

4

 

Technical parameters/polarity:

PNP

 

Technical parameters/dissipated power:

2 W

 

Technical parameters/breakdown voltage (collector emitter):

100 V

 

Technical parameters/Maximum allowable collector current:

3A

 

Technical parameters/minimum current amplification factor (hFE):

120 @500mA, 2V

 

Technical parameters/rated power (Max):

800 mW

 

Technical parameters/DC current gain (hFE):

150

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2000 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

TO-261-4

 

Dimensions/Packaging:

TO-261-4

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NSS1C200MZ4T3G NSS1C200MZ4T3G ON Semiconductor 类似代替 TO-261-4
100 V， 2.0 A ，低VCE （ sat）的PNP晶体管 100 V, 2.0 A, Low VCE(sat) PNP Transistor
PDF
NSV1C200MZ4T1G NSV1C200MZ4T1G ON Semiconductor 功能相似 SOT-223-4
100 V， 2.0 A ，低VCE （ sat）的PNP晶体管 100 V, 2.0 A, Low VCE(sat) PNP Transistor
PDF

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