Technical parameters/power supply voltage (DC): | 2.70V (min) |
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Technical parameters/number of pins: | 48 |
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Technical parameters/digits: | 8, 16 |
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Technical parameters/access time: | 70 ns |
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Technical parameters/memory capacity: | 1000000 B |
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Technical parameters/access time (Max): | 70 ns |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/power supply voltage: | 2.7V ~ 3.6V |
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Technical parameters/power supply voltage (Max): | 3.6 V |
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Technical parameters/power supply voltage (Min): | 2.7 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 48 |
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Encapsulation parameters/Encapsulation: | TSOP-48 |
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Dimensions/Packaging: | TSOP-48 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ (TA) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Each |
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Other/Manufacturing Applications: | Communications and Networks, Communications& Networking |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
M29W800DB70N6T
|
Micron | 功能相似 | TSOP |
8兆位(1MB X8或X16 512KB ,引导块) 3V供应闪存 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
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||
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ST Microelectronics | 类似代替 | TSOP-48 |
MICRON M29W800DT45N6E 闪存, 8 Mbit, 1M x 8位 / 512K x 16位, CFI, 并行, TSOP, 48 引脚
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M29W800DT70N6T
|
ST Microelectronics | 功能相似 | TSSOP |
8兆位(1MB X8或X16 512KB ,引导块) 3V供应闪存 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
|
||
S29AL008J70TFI010
|
Spansion | 类似代替 | TSOP-48 |
S29AL008J 系列 8 Mb (1M x 8/512K x 16) 70 ns CMOS 闪存 - TSOP-48
|
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