Technical parameters/rated voltage (DC): | -20.0 V |
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Technical parameters/rated current: | -5.60 A |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 2 W |
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Technical parameters/product series: | IRLMS6802 |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Leakage source breakdown voltage: | -20.0 V |
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Technical parameters/Continuous drain current (Ids): | -5.60 A |
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Technical parameters/rise time: | 33.0 ns |
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Technical parameters/Input capacitance (Ciss): | 1079pF @10V(Vds) |
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Technical parameters/rated power (Max): | 2 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | TSOP-6 |
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Dimensions/Packaging: | TSOP-6 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 功能相似 | SOT |
FAIRCHILD SEMICONDUCTOR FDC365P 晶体管, MOSFET, P沟道, -4.3 A, -35 V, 0.045 ohm, -10 V, -1.8 V
|
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FDC365P
|
Fairchild | 功能相似 | TSOT-23-6 |
FAIRCHILD SEMICONDUCTOR FDC365P 晶体管, MOSFET, P沟道, -4.3 A, -35 V, 0.045 ohm, -10 V, -1.8 V
|
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