Technical parameters/forward voltage: | 1V @1A |
|
Technical parameters/reverse recovery time: | 50 ns |
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Technical parameters/forward current: | 1 A |
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Technical parameters/Maximum forward surge current (Ifsm): | 30 A |
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Technical parameters/forward voltage (Max): | 1 V |
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Technical parameters/forward current (Max): | 1 A |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-213AB |
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Dimensions/Length: | 5.2 mm |
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Dimensions/Width: | 2.67 mm |
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Dimensions/Height: | 2.67 mm |
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Dimensions/Packaging: | DO-213AB |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Power Management, Consumer Electronics, Commercial, Communications & Networking, Automotive |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BYM12-200-E3/97
|
Vishay Semiconductor | 完全替代 | DO-213AB |
1A，Vishay Semiconductor Vishay 超快恢复整流器，具有非常快速的低至 15ns 反向恢复时间和高达 1500V 的电压级别。 典型应用包括较高频率切换模式电源 (SMPS)、反相器和续流二极管。 ### 二极管和整流器，Vishay Semiconductor
|
||
BYM12-200HE3/96
|
VISHAY | 类似代替 | DO-213AB |
整流器 RECOMMENDED ALT 78-BYM12-200HE3_A/H
|
||
DL4003-13-F
|
Diodes | 功能相似 | DL-41 |
Diode 200V 1A 2Pin MELF T/R
|
||
EGL41D-E3/96
|
VISHAY | 完全替代 | DO-213AB |
VISHAY EGL41D-E3/96 快速/超快二极管, 单, 200 V, 1 A, 1 V, 50 ns, 30 A
|
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