Technical parameters/capacitance: | 0.25 pF |
|
Technical parameters/dissipated power: | - |
|
Technical parameters/forward voltage (Max): | 350 mV |
|
Technical parameters/forward current (Max): | 1 mA |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-323-3 |
|
Dimensions/Height: | 1 mm |
|
Dimensions/Packaging: | SOT-323-3 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Other/Manufacturing Applications: | Signal Processing, RF Communications, Signal Processing, RF Communications, |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HSMS-286C-BLKG
|
Broadcom | 完全替代 | SOT-323-3 |
Avago Technologies ### 二极管和整流器,Avago Technologies
|
||
HSMS-286C-TR1G
|
Broadcom | 类似代替 | SOT-323-3 |
BROADCOM LIMITED HSMS-286C-TR1G RF Schottky Diode, Detector, Dual Series, 4V, 1mA, 350mV, 0.25pF, SOT-323
|
||
HSMS-286C-TR2G
|
AVAGO Technologies | 完全替代 | SOT-323-3 |
Diode RF Schottky 4V 3Pin SOT-323 T/R
|
||
HSMS-286C-TR2G
|
Broadcom | 完全替代 | SOT-323-3 |
Diode RF Schottky 4V 3Pin SOT-323 T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review