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Model AM29F010B-70JF

Description SPANSION AM29F010B-70JF 闪存, 1 Mbit, 128K x 8位, CFI, 并行, LCC, 32 引脚

Brand: Spansion

Packaging PLCC-32

Delivery time

Packaging method Tube

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(7277) Minimum order quantity(1)

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Technical parameters/power supply voltage (DC):	4.50V (min)
Technical parameters/operating voltage:	4.5V ~ 5.5V
Technical parameters/power supply current:	30 mA
Technical parameters/number of pins:	32
Technical parameters/access time:	70 ns
Technical parameters/memory capacity:	125000 B
Technical parameters/access time (Max):	70 ns
Technical parameters/operating temperature (Max):	85 ℃
Technical parameters/operating temperature (Min):	-40 ℃
Technical parameters/power supply voltage (Max):	5.5 V
Technical parameters/power supply voltage (Min):	4.5 V
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	32
Encapsulation parameters/Encapsulation:	PLCC-32
Dimensions/Packaging:	PLCC-32
Physical parameters/operating temperature:	40℃ ~ 85℃
Other/Product Lifecycle:	End of Life
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17
Customs Information/Hong Kong Import and Export License:	NLR

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	SST39SF010A-70-4I-NHE	Microchip	功能相似	PLCC-32	SST39SF010A/020A/040 并行 SuperFlash® 存储器 Microchip 的 SST39SF010A/020A/040 系列设备为并行多用途 SuperFlash® 存储集成电路。 ### 特点 4.5-5.5V 读写操作寿命 - 100,000 次循环（典型）低功耗 - 有源电流 10 mA，待机电流 30 μA（14 MHz 时的典型值）扇区擦除能力 - 均匀 4 K 扇区读取访问时间 - 55 至 70 ns 扇区擦除时间 18 ms 芯片擦除时间：70 ms（典型）字节编程时间 - 14 μs（典型）芯片重写时间 – SST39SF010A 2 秒、SST39SF020A 4 秒、SST39SF040 8 秒（典型值）锁存地址和数据自动写入计时 - 内部 VPP 生成写入结束检测 - 触发位 - 数据# 轮询 TTL 输入/输出兼容性 JEDEC 标准 - 闪存 EEPROM 引脚输出和命令套件 ### 闪存，Microchip	PDF
	SST39SF010A-70-4I-NHE	Silicon Storage Tech	功能相似	LCC	SST39SF010A/020A/040 并行 SuperFlash® 存储器 Microchip 的 SST39SF010A/020A/040 系列设备为并行多用途 SuperFlash® 存储集成电路。 ### 特点 4.5-5.5V 读写操作寿命 - 100,000 次循环（典型）低功耗 - 有源电流 10 mA，待机电流 30 μA（14 MHz 时的典型值）扇区擦除能力 - 均匀 4 K 扇区读取访问时间 - 55 至 70 ns 扇区擦除时间 18 ms 芯片擦除时间：70 ms（典型）字节编程时间 - 14 μs（典型）芯片重写时间 – SST39SF010A 2 秒、SST39SF020A 4 秒、SST39SF040 8 秒（典型值）锁存地址和数据自动写入计时 - 内部 VPP 生成写入结束检测 - 触发位 - 数据# 轮询 TTL 输入/输出兼容性 JEDEC 标准 - 闪存 EEPROM 引脚输出和命令套件 ### 闪存，Microchip	PDF