Technical parameters/rise/fall time: | 24ns, 10ns |
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Technical parameters/Input voltage (DC): | 1.50 V |
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Technical parameters/output voltage: | 7.00 V, 7.00 V (max) |
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Technical parameters/number of channels: | 1 |
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Technical parameters/number of pins: | 6 |
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Technical parameters/forward voltage: | 1.5 V |
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Technical parameters/input current: | 15.0 mA |
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Technical parameters/dissipated power: | 85 mW |
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Technical parameters/data rate: | 15.0 Mbps |
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Technical parameters/rise time: | 0.045 µs |
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Technical parameters/isolation voltage: | 5 kV |
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Technical parameters/forward current: | 20 mA |
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Technical parameters/forward voltage (Max): | 1.75 V |
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Technical parameters/forward current (Max): | 20 mA |
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Technical parameters/descent time: | 0.02 µs |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/dissipated power (Max): | 85 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOIC-6 |
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Dimensions/Height: | 3.18 mm |
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Dimensions/Packaging: | SOIC-6 |
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Physical parameters/operating temperature: | -40℃ ~ 100℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Each |
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Other/Manufacturing Applications: | Computer-peripheral interfaces, Computers & Computer Peripherals, Switching power supply, Power Management, Signal Processing, Ground loop elimination, Fi, Instrument input/output isolation, Digital isolation for A/D, D/A conversion, Pulse transformer replacement, Power Management, Microprocessor Syst Alternative material
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