Technical parameters/frequency: | 350 MHz |
|
Technical parameters/number of output interfaces: | 1 |
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Technical parameters/number of circuits: | 1 |
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Technical parameters/number of pins: | 8 |
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Technical parameters/maximum duty cycle: | 53 % |
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Technical parameters/operating temperature (Max): | 85 ℃ |
|
Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/power supply voltage: | 2.375V ~ 3.465V |
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Technical parameters/power supply voltage (Max): | 3.465 V |
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Technical parameters/power supply voltage (Min): | 3.135 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 4.90 mm |
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Dimensions/Width: | 3.90 mm |
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Dimensions/Packaging: | SOIC-8 |
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Dimensions/Thickness: | 1.50 mm |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ (TA) |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
830S21AMI-01LFT
|
Integrated Device Technology | 完全替代 | SOIC-8 |
1 - TO- 1 2.5V,3.3V微分- TOLVCMOS / LVTTL译者 1-TO-1 2.5V, 3.3V DIFFERENTIAL-TOLVCMOS/LVTTL TRANSLATOR
|
||
|
|
Renesas Electronics | 完全替代 | SOIC-8 |
1 - TO- 1 2.5V,3.3V微分- TOLVCMOS / LVTTL译者 1-TO-1 2.5V, 3.3V DIFFERENTIAL-TOLVCMOS/LVTTL TRANSLATOR
|
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