Technical parameters/rise/fall time: | 8 ns |
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Technical parameters/output voltage: | 20.0 V |
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Technical parameters/number of channels: | 1 |
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Technical parameters/number of pins: | 6 |
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Technical parameters/forward voltage: | 1.55 V |
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Technical parameters/input current: | 11.0 mA |
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Technical parameters/dissipated power: | 600 mW |
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Technical parameters/rise time: | 30 ns |
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Technical parameters/isolation voltage: | 5 kV |
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Technical parameters/forward current: | 25 mA |
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Technical parameters/input current (Min): | 25 mA |
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Technical parameters/forward voltage (Max): | 1.95 V |
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Technical parameters/forward current (Max): | 25 mA |
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Technical parameters/descent time: | 30 ns |
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Technical parameters/descent time (Max): | 30 ns |
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Technical parameters/rise time (Max): | 30 ns |
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Technical parameters/operating temperature (Max): | 105 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/dissipated power (Max): | 600 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOIC-6 |
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Dimensions/Height: | 3.18 mm |
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Dimensions/Packaging: | SOIC-6 |
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Physical parameters/operating temperature: | -40℃ ~ 105℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Each |
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Other/Manufacturing Applications: | Power and SiC MOSFET Gate Drive, Switching Power Supplies (SPS), Motor Drive & Control, AC/Brushless DC Motor Drives, Motor drive and control, power management, power management |
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