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Model SCT3160KLGC11
Description SCT3160KL 系列 1200 V 17 A 208 mOhm N-沟道 SiC 功率 Mosfet - TO-247N
Product QR code
Brand: ROHM Semiconductor
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
16.83  yuan 16.83yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9048) Minimum order quantity(1)
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Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

160 mΩ

 

Technical parameters/dissipated power:

103 W

 

Technical parameters/threshold voltage:

5.6 V

 

Technical parameters/drain source voltage (Vds):

1200 V

 

Technical parameters/Leakage source breakdown voltage:

1200 V

 

Technical parameters/rise time:

18 ns

 

Technical parameters/Input capacitance (Ciss):

398pF @800V(Vds)

 

Technical parameters/descent time:

25 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

55 ℃

 

Technical parameters/dissipated power (Max):

103W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-247-3

 

Dimensions/Packaging:

TO-247-3

 

Physical parameters/operating temperature:

175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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