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Model RSU002P03T106
Description 4V驱动P沟道MOSFET 4V Drive Pch MOSFET
Product QR code
Brand: ROHM Semiconductor
Packaging SOT-323-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.21  yuan 0.21yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4868) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-30.0 V

 

Technical parameters/rated current:

-200 mA

 

Technical parameters/number of channels:

1

 

Technical parameters/drain source resistance:

1.60 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

0.2 W

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

200 mA

 

Technical parameters/rise time:

5 ns

 

Technical parameters/Input capacitance (Ciss):

30pF @10V(Vds)

 

Technical parameters/rated power (Max):

200 mW

 

Technical parameters/descent time:

40 ns

 

Technical parameters/dissipated power (Max):

200 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-323-3

 

Dimensions/Length:

2 mm

 

Dimensions/Width:

1.25 mm

 

Dimensions/Height:

0.8 mm

 

Dimensions/Packaging:

SOT-323-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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