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Model NTTFS4C13NTAG
Description 晶体管, MOSFET, N沟道, 38 A, 30 V, 0.0075 ohm, 10 V, 2.1 V
Product QR code
Brand: ON Semiconductor
Packaging WDFN-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.29  yuan 0.29yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9128) Minimum order quantity(1)
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Technical parameters/halogen-free state:

Halogen Free

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

5

 

Technical parameters/drain source resistance:

0.0075 Ω

 

Technical parameters/polarity:

N-CH

 

Technical parameters/dissipated power:

21.5 W

 

Technical parameters/threshold voltage:

2.1 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

11.7A

 

Technical parameters/rise time:

35 ns

 

Technical parameters/Input capacitance (Ciss):

770pF @15V(Vds)

 

Technical parameters/descent time:

5 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

780mW (Ta), 21.5W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

WDFN-8

 

Dimensions/Packaging:

WDFN-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTTFS4C13NTWG NTTFS4C13NTWG ON Semiconductor 类似代替 WDFN-8
NTTFS4C13N: 单 N 沟道，功率 MOSFET，30V，38A，9.4mΩ
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