NJVNJD2873T4G In Stock|PDF|Datasheet|Price|Agent[NJVNJD2873T4G Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

Warm reminder: The pictures are for reference only. The actual product may vary

Model NJVNJD2873T4G

Description ON SEMICONDUCTOR NJVNJD2873T4G Bipolar (BJT) Single Transistor, AEC-Q101, NPN, 50 V, 65 MHz, 15 W, 2 A, 40 hFE 新

Brand: ON Semiconductor

Packaging TO-252

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

Add to Cart Buy now

Welcome to use ICGOODFIND AI Assistant

Chip AI consultant

Download related files

PDF

Technical parameters/frequency:	65 MHz
Technical parameters/number of pins:	3
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	15 W
Technical parameters/breakdown voltage (collector emitter):	50 V
Technical parameters/Maximum allowable collector current:	2A
Technical parameters/minimum current amplification factor (hFE):	40
Technical parameters/DC current gain (hFE):	40
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	1680 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252
Dimensions/Length:	6.73 mm
Dimensions/Width:	6.22 mm
Dimensions/Height:	2.38 mm
Dimensions/Packaging:	TO-252
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-65℃ ~ 175℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2015/12/17
Customs information/ECCN code:	EAR99
Customs Information/Hong Kong Import and Export License:	NLR