Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 3 Ω |
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Technical parameters/dissipated power: | 0.325 W |
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Technical parameters/threshold voltage: | 1.6 V |
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Technical parameters/Input capacitance: | 15 pF |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/rise time: | 7 ns |
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Technical parameters/Input capacitance (Ciss): | 17pF @10V(Vds) |
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Technical parameters/rated power (Max): | 265 mW |
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Technical parameters/descent time: | 5 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 265mW (Ta), 1.33W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Power management, audio, signal processing |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002K,215
|
NXP | 类似代替 | SOT-23-3 |
晶体管, MOSFET, N沟道, 340 mA, 60 V, 2.8 ohm, 10 V, 2 V
|
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