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Model MMBT6428LT1G
Description ON SEMICONDUCTOR MMBT6428LT1G 双极晶体管
Product QR code
Brand: ON Semiconductor
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.16  yuan 0.16yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8538) Minimum order quantity(1)
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Alternative material

Technical parameters/frequency:

700 MHz

 

Technical parameters/rated voltage (DC):

50.0 V

 

Technical parameters/rated current:

200 mA

 

Technical parameters/number of pins:

3

 

Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

225 mW

 

Technical parameters/breakdown voltage (collector emitter):

50 V

 

Technical parameters/Maximum allowable collector current:

0.2A

 

Technical parameters/minimum current amplification factor (hFE):

250 @100µA, 5V

 

Technical parameters/maximum current amplification factor (hFE):

650

 

Technical parameters/rated power (Max):

225 mW

 

Technical parameters/DC current gain (hFE):

250

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

225 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-23-3

 

Dimensions/Length:

3.04 mm

 

Dimensions/Width:

2.64 mm

 

Dimensions/Height:

1.11 mm

 

Dimensions/Packaging:

SOT-23-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with standard/REACH SVHC version:

2015/12/17
Model Brand Similarity Encapsulation Introduction Data manual
BCX70J BCX70J TY Semiconductor 类似代替
单晶体管 双极, NPN, 45 V, 125 MHz, 350 mW, 200 mA, 250 hFE
PDF
BCX70J BCX70J Kexin 类似代替
单晶体管 双极, NPN, 45 V, 125 MHz, 350 mW, 200 mA, 250 hFE
PDF
BCX70J BCX70J Nexperia 类似代替 SOT-23
单晶体管 双极, NPN, 45 V, 125 MHz, 350 mW, 200 mA, 250 hFE
PDF
BCX70J BCX70J NXP 类似代替 SOT-23
单晶体管 双极, NPN, 45 V, 125 MHz, 350 mW, 200 mA, 250 hFE
PDF
BCX70J BCX70J Siemens Semiconductor 类似代替 SOT-23
单晶体管 双极, NPN, 45 V, 125 MHz, 350 mW, 200 mA, 250 hFE
PDF
BCX70J BCX70J CJ 类似代替 SOT-23
单晶体管 双极, NPN, 45 V, 125 MHz, 350 mW, 200 mA, 250 hFE
PDF
BCX70J BCX70J ON Semiconductor 类似代替 SOT-23-3
单晶体管 双极, NPN, 45 V, 125 MHz, 350 mW, 200 mA, 250 hFE
PDF
BCX70J BCX70J Fairchild 类似代替 SOT-23-3
单晶体管 双极, NPN, 45 V, 125 MHz, 350 mW, 200 mA, 250 hFE
PDF
BCX70J BCX70J Shenzhen Jin Yu Semiconductor 类似代替
单晶体管 双极, NPN, 45 V, 125 MHz, 350 mW, 200 mA, 250 hFE
PDF
BCX70J BCX70J Vishay Semiconductor 类似代替 SOT-23
单晶体管 双极, NPN, 45 V, 125 MHz, 350 mW, 200 mA, 250 hFE
PDF
MMBT6428 MMBT6428 Freescale 类似代替 SOT-23
ON Semiconductor MMBT6428 , NPN 晶体管, 500 mA, Vce=50 V, HFE:250, 700 MHz, 3引脚 SOT-23封装
PDF
MMBT6428 MMBT6428 Fairchild 类似代替 SOT-23-3
ON Semiconductor MMBT6428 , NPN 晶体管, 500 mA, Vce=50 V, HFE:250, 700 MHz, 3引脚 SOT-23封装
PDF
MMBT6428 MMBT6428 Samsung 类似代替
ON Semiconductor MMBT6428 , NPN 晶体管, 500 mA, Vce=50 V, HFE:250, 700 MHz, 3引脚 SOT-23封装
PDF
MMBT6428LT1 MMBT6428LT1 Motorola 类似代替 SOT-23-3
放大器晶体管（ NPN硅） Amplifier Transistors(NPN Silicon)
PDF

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