Technical parameters/rated voltage (DC): | 600 V |
|
Technical parameters/rated current: | 70.0 A |
|
Technical parameters/number of pins: | 3 |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 200 W |
|
Technical parameters/product series: | IRG4PC50F |
|
Technical parameters/rise time: | 25 ns |
|
Technical parameters/breakdown voltage (collector emitter): | 600 V |
|
Technical parameters/thermal resistance: | 0.64℃/W (RθJC) |
|
Technical parameters/rated power (Max): | 200 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 200000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-247-3 |
|
Dimensions/Length: | 15.87 mm |
|
Dimensions/Height: | 20.7 mm |
|
Dimensions/Packaging: | TO-247-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2014/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HGTG30N60C3D
|
Fairchild | 功能相似 | TO-247-3 |
FAIRCHILD SEMICONDUCTOR HGTG30N60C3D 单晶体管, IGBT, 63 A, 1.8 V, 208 W, 600 V, TO-247, 3 引脚
|
||
HGTG30N60C3D
|
Freescale | 功能相似 |
FAIRCHILD SEMICONDUCTOR HGTG30N60C3D 单晶体管, IGBT, 63 A, 1.8 V, 208 W, 600 V, TO-247, 3 引脚
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review