Technical parameters/rated voltage (DC): | -30.0 V |
|
Technical parameters/rated current: | -8.00 A |
|
Technical parameters/number of pins: | 8 |
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Technical parameters/drain source resistance: | 32 mΩ |
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Technical parameters/polarity: | P-Channel, Dual P-Channel |
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Technical parameters/dissipated power: | 2 W |
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Technical parameters/product series: | IRF7328 |
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Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Continuous drain current (Ids): | -8.00 A |
|
Technical parameters/Input capacitance (Ciss): | 2675pF @25V(Vds) |
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Technical parameters/rated power (Max): | 2 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Cut Tape (CT) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS4935BZ
|
ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS4935BZ. 场效应管, MOSFET, P沟道, -30V, SOIC
|
||
FDS4935BZ
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS4935BZ. 场效应管, MOSFET, P沟道, -30V, SOIC
|
||
IRF7328TR
|
Infineon | 完全替代 | SOIC-8 |
SOIC P-CH 30V 8A
|
||
IRF7328TR
|
International Rectifier | 完全替代 | SOIC |
SOIC P-CH 30V 8A
|
||
SI4943BDY-T1-E3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
双P通道20 - V(D -S)的MOSFET Dual P-Channel 20-V (D-S) MOSFET
|
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