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Model IRAMS10UP60B
Description INFINEON IRAMS10UP60B. 晶体管, IGBT模块, SIP1
Product QR code
Brand: Infineon
Packaging SIP-1
Delivery time
Packaging method Tube
Standard packaging quantity 1
88.09  yuan 88.09yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2218) Minimum order quantity(1)
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Technical parameters/frequency:

20 KHz

 

Technical parameters/number of output interfaces:

3

 

Technical parameters/output voltage:

450 V

 

Technical parameters/output current:

10 A

 

Technical parameters/power supply current:

165 μA

 

Technical parameters/number of pins:

23

 

Technical parameters/dissipated power:

2.2 W

 

Technical parameters/isolation voltage:

2000 Vrms

 

Technical parameters/switching frequency:

20 kHz

 

Technical parameters/breakdown voltage (collector emitter):

600 V

 

Technical parameters/input bias current:

200 μA

 

Technical parameters/output current (Max):

10 A

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-40 ℃

 

Technical parameters/working junction temperature (Max):

150 ℃

 

Technical parameters/dissipated power (Max):

27000 mW

 

Technical parameters/power supply voltage:

20 V

 

Technical parameters/power supply voltage (Max):

20 V

 

Technical parameters/power supply voltage (Min):

12 V

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

23

 

Encapsulation parameters/Encapsulation:

SIP-1

 

Dimensions/Length:

62 mm

 

Dimensions/Width:

5 mm

 

Dimensions/Height:

22.3 mm

 

Dimensions/Packaging:

SIP-1

 

Physical parameters/operating temperature:

-40℃ ~ 150℃

 

Other/Product Lifecycle:

Last Time Buy

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Appl

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRAMS10UP60B-2 IRAMS10UP60B-2 Infineon 功能相似 SIP-1
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
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