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Model IPB042N10N3G
Description 100V,100A,N沟道功率MOSFET
Product QR code
Brand: Infineon
Packaging TO-263-2
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.71  yuan 2.71yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7427) Minimum order quantity(1)
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Technical parameters/polarity:

N-Channel

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/Input capacitance (Ciss):

6320pF @50V(Vds)

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

214 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-263-2

 

Dimensions/Length:

10.31 mm

 

Dimensions/Width:

9.45 mm

 

Dimensions/Height:

4.57 mm

 

Dimensions/Packaging:

TO-263-2

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

PB free

 

Compliant with the REACH SVHC standard:

No SVHC

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IPB04CN10NG IPB04CN10NG Infineon 完全替代 D2PAK
OptiMOS®2功率三极管 OptiMOS™2 Power-Transistor

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