Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 0.31 W |
|
Technical parameters/Input capacitance: | 46 pF |
|
Technical parameters/drain source voltage (Vds): | 50 V |
|
Technical parameters/Continuous drain current (Ids): | 0.36A |
|
Technical parameters/rise time: | 2.5 ns |
|
Technical parameters/Input capacitance (Ciss): | 46pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 310 mW |
|
Technical parameters/descent time: | 11 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 310 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SOT-363 |
|
Dimensions/Length: | 2.2 mm |
|
Dimensions/Packaging: | SOT-363 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DMN53D0LDW-13
|
Diodes | 完全替代 | SOT-363 |
场效应管(MOSFET) DMN53D0LDW-13 SOT-363-6
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review