Technical parameters/minimum current amplification factor (hFE): | 68 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 100 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SOT-363 |
|
Dimensions/Length: | 2.2 mm |
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Dimensions/Width: | 1.35 mm |
|
Dimensions/Height: | 1 mm |
|
Dimensions/Packaging: | SOT-363 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5314DW1T1G
|
ON Semiconductor | 功能相似 | SC-70-6 |
ON SEMICONDUCTOR MUN5314DW1T1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率, SOT-363
|
||
PUMD3
|
Nexperia | 功能相似 | SOT-363 |
NXP PUMD3 双极晶体管阵列, BRT, NPN, PNP, 50 V, 200 mW, 100 mA, 30 hFE, SOT-363
|
||
PUMD3
|
NXP | 功能相似 | SOT-363 |
NXP PUMD3 双极晶体管阵列, BRT, NPN, PNP, 50 V, 200 mW, 100 mA, 30 hFE, SOT-363
|
||
PUMD3
|
Philips | 功能相似 |
NXP PUMD3 双极晶体管阵列, BRT, NPN, PNP, 50 V, 200 mW, 100 mA, 30 hFE, SOT-363
|
|||
PUMD3,115
|
NXP | 功能相似 | SOT-363 |
NXP PUMD3,115 双极晶体管阵列, BRT, NPN, PNP, 50 V, 200 mW, 100 mA, 30 hFE, SOT-363
|
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