Chip AI consultant
Technical parameters/number of channels: | 1 |
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Technical parameters/number of pins: | 8 |
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Technical parameters/drain source resistance: | 0.01 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 3.2 W |
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Technical parameters/threshold voltage: | 3 V |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Leakage source breakdown voltage: | 60 V |
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Technical parameters/rise time: | 4 ns |
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Technical parameters/Input capacitance (Ciss): | 1480pF @30V(Vds) |
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Technical parameters/rated power (Max): | 75 W |
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Technical parameters/descent time: | 3.2 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 3.2W (Ta), 75W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | PowerTDFN-8 |
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Dimensions/Length: | 6 mm |
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Dimensions/Width: | 4.9 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | PowerTDFN-8 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Supply in progress |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD18563Q5A
|
Texas Instruments | 功能相似 | - |
60-V N 通道 NexFET 功率 MOSFET，CSD18563Q5A
|
||
CSD18563Q5A
|
TI | 功能相似 | VSON-FET-8 |
60-V N 通道 NexFET 功率 MOSFET，CSD18563Q5A
|
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